The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2022
Filed:
Sep. 25, 2020
Southeast University, Jiangsu, CN;
Csmc Technologies Fab2 Co., Ltd, Jiangsu, CN;
Siyang Liu, Jiangsu, CN;
Ningbo Li, Jiangsu, CN;
Dejin Wang, Jiangsu, CN;
Kui Xiao, Jiangsu, CN;
Chi Zhang, Jiangsu, CN;
Sheng Li, Jiangsu, CN;
Xinyi Tao, Jiangsu, CN;
Weifeng Sun, Jiangsu, CN;
Longxing Shi, Jiangsu, CN;
SOUTHEAST UNIVERSITY, Jiangsu, CN;
CSMC TECHNOLOGIES FAB2 CO., LTD., Jiangsu, CN;
Abstract
A gallium nitride power device, including: a gallium nitride substrate; cathodes; a plurality of gallium nitride protruding structures arranged on the gallium nitride substrate and between the cathodes, a groove is formed between adjacent gallium nitride protruding structures; an electron transport layer, covering a top portion and side surfaces of each of the gallium nitride protruding structures; a gallium nitride layer, arranged on the electron transport layer and filling each of the grooves; a plurality of second conductivity type regions, where each of the second conductivity type regions extends downward from a top portion of the gallium nitride layer into one of the grooves, and the top portion of each of the gallium nitride protruding structures is higher than a bottom portion of each of the second conductivity type regions; and an anode, arranged on the gallium nitride layer and the second conductivity type regions.