The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2024
Filed:
Sep. 25, 2020
Southeast University, Jiangsu, CN;
Csmc Technologies Fab2 Co., Ltd., Wuxi, CN;
Jiaxing Wei, Wuxi, CN;
Qichao Wang, Wuxi, CN;
Kui Xiao, Wuxi, CN;
Dejin Wang, Wuxi, CN;
Li Lu, Wuxi, CN;
Ling Yang, Wuxi, CN;
Ran Ye, Wuxi, CN;
Siyang Liu, Wuxi, CN;
Weifeng Sun, Wuxi, CN;
Longxing Shi, Wuxi, CN;
SOUTHEAST UNIVERSITY, Jiangsu, CN;
CSMC TECHNOLOGIES FAB2 CO., LTD., Wuxi, CN;
Abstract
A lateral double-diffused metal oxide semiconductor field effect transistor (LDMOS), including: a trench gate including a lower part inside a trench and an upper part outside the trench, a length of the lower part in a width direction of a conducting channel being less than that of the upper part, and the lower part extending into a body region and having a depth less than that of the body region; an insulation structure arranged between a drain region and the trench gate and extending downwards into a drift region, a depth of the insulation structure being less than that of the drift region.