Ling Yang

Title: Innovator Ling Yang: Pioneering LDMOS Technology in Wuxi, CN

Introduction: Ling Yang is an accomplished inventor based in Wuxi, China, known for his significant contributions to semiconductor technology. With one patent to his name, Yang is recognized for his innovative designs that enhance the functionality of electronic devices.

Latest Patents: Yang's most notable patent is the "Lateral Double-Diffused Metal Oxide Semiconductor Field Effect Transistor" (LDMOS). This invention features a trench gate with a lower part situated within a trench and an upper part positioned outside, innovatively designed for improved efficiency. The length of the lower part in the width direction of the conducting channel is intentionally less than that of the upper part. Additionally, the lower part extends into a body region with a depth that is less than that of the body region itself. An insulation structure is also included, which is arranged between a drain region and the trench gate, extending downwards into a drift region, with a depth that remains less than that of the drift region. This design contributes to the overall performance of semiconductor devices.

Career Highlights: Ling Yang has worked with notable institutions, including Southeast University and CSMC Technologies Fab2 Co., Ltd. His experience in these prestigious organizations has greatly influenced his work and fostered an environment for innovative thinking.

Collaborations: Throughout his career, Yang has collaborated with other talented professionals, including Qichao Wang, who has been instrumental in furthering his research and development efforts in the field of semiconductor technology.

Conclusion: With his groundbreaking patent and collaborative spirit, Ling Yang stands as a prominent figure in the field of semiconductor innovation. His work not only showcases individual brilliance but also emphasizes the importance of teamwork and collaboration in achieving technological advancements.