Ran Ye

Title: The Innovations of Ran Ye

Introduction

Ran Ye is a notable inventor based in Wuxi, China. He has made significant contributions to the field of semiconductor technology. His work has led to the development of innovative devices that enhance electronic performance.

Latest Patents

Ran Ye holds a patent for a lateral double-diffused metal oxide semiconductor field effect transistor (LDMOS). This invention includes a trench gate with a lower part inside a trench and an upper part outside the trench. The length of the lower part in the width direction of the conducting channel is less than that of the upper part. Additionally, the lower part extends into a body region and has a depth less than that of the body region. An insulation structure is arranged between a drain region and the trench gate, extending downwards into a drift region, with a depth less than that of the drift region.

Career Highlights

Ran Ye has worked at Southeast University and CSMC Technologies Fab2 Co., Ltd. His experience in these institutions has allowed him to collaborate with other professionals in the field.

Collaborations

Some of his notable coworkers include Jiaxing Wei and Qichao Wang. Their collective efforts have contributed to advancements in semiconductor technology.

Conclusion

Ran Ye's innovative work in semiconductor technology, particularly with his patented LDMOS, showcases his expertise and dedication to the field. His contributions continue to influence the development of electronic devices.