This inventor holds 12 USPTO granted patents. Top assignees: Mitsubishi Denki Kabushiki Kaisha, Mitsubishi Electric Corporation. Active years: 1995-2016.
Location History:
- Itami, JP (1995)
- Hyogo, JP (1998 - 2001)
- Chiyoda-ku, JP (2011)
- Tokyo, JP (1998 - 2016)
Company Filing History:
9 out of 21,351 
3 out of 16,571 
Years Active: 1995-2016
Title: The Innovations of Shinji Aono
Introduction
Shinji Aono is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of electrical engineering, particularly in the development of insulating gate bipolar transistors (IGBTs). With a total of 12 patents to his name, Aono's work has had a lasting impact on the industry.
Latest Patents
One of Aono's latest patents is focused on an insulating gate-type bipolar transistor. The objective of this invention is to provide a trench gate type IGBT that achieves both retention of withstand voltage and a reduction in ON-state voltage. This innovative IGBT, known as SJ-RC-IGBT, includes a drift layer with a super junction structure, as well as an IGBT area and a freewheeling diode (FWD) area on the rear surface. The design features a first drift layer with a specific impurity concentration and thickness, ensuring optimal performance. Another notable patent involves a trench gate IGBT designed to reduce on-state voltage while maintaining withstand voltage. This design incorporates multiple layers of different conductivity types to enhance efficiency.
Career Highlights
Shinji Aono has worked with several esteemed companies throughout his career. Notably, he has been associated with Mitsubishi Denki Kabushiki Kaisha and Mitsubishi Electric Corporation. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking innovations in the field.
Collaborations
Aono has collaborated with several talented individuals in his field. Notable coworkers include Hideki Takahashi and Tadaharu Minato, who have also made significant contributions to electrical engineering.
Conclusion
Shinji Aono's work in the development of insulating gate bipolar transistors has positioned him as a key figure in electrical engineering. His numerous patents and collaborations reflect his dedication to innovation and excellence in his field.