The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2010
Filed:
Apr. 08, 2008
Hideki Takahashi, Tokyo, JP;
Shinji Aono, Tokyo, JP;
Hideki Takahashi, Tokyo, JP;
Shinji Aono, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
An insulated gate bipolar transistor includes a first main electrode on a first main surface and in contact with a base region of an insulated gate transistor at the first main surface, a first semiconductor layer of a first conductivity type on a second main surface, a second semiconductor layer of a second conductivity type on the second main surface and vertically aligned with a region of the first main electrode in contact with the base region, and a second main electrode formed on the first and second semiconductor layers. An interface between the second main electrode and each of the first and second semiconductor layers is parallel to the first main surface, a distance between the first main surface and the interface is equal to 200 μm or smaller, and a thickness of each of the first and second semiconductor layers is equal to 2 μm or smaller.