The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2001
Filed:
Feb. 01, 1999
Shinji Aono, Hyogo, JP;
Masana Harada, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
An anode electrode metal layer composed of aluminum is formed in a region on the inner side than an anode layer formed on a main surface of a semiconductor substrate. Thus, an impurity diffusion region from the innermost circumferential surface of said surface of field limiting innermost circumferential layer to the outermost circumferential surface of the anode electrode metal layer may be used as an electrical resistance. As a result, the hole density distributed from the bottom side of the field limiting innermost circumferential layer to a cathode layer when forward bias is applied may be reduced. As a result, when a reverse bias is applied, locally great recovery current passed from a cathode layer to the bottom of field limiting innermost circumferential layer may be restrained. Therefore, a diode capable of preventing destruction of a field limiting innermost circumferential layer when a reverse bias is applied may be provided.