The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2016
Filed:
May. 29, 2012
Shinji Aono, Tokyo, JP;
Tadaharu Minato, Tokyo, JP;
Shinji Aono, Tokyo, JP;
Tadaharu Minato, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
An object of the present invention is to provide a trench gate type IGBT achieving both retention of withstand voltage and lowering of ON-state voltage and to provide a method for manufacturing the trench gate type IGBT. The IGBT according to the present invention is an SJ-RC-IGBT which includes a drift layer having super junction structure, and includes an IGBT area and an FWD area on the rear surface. In the IGBT according to the present invention, a first drift layer has an impurity concentration of 1×10atms/cmor higher and lower than 2×10atms/cm, and a thickness of 10 μm or larger and smaller than 50 μm; and that a buffer layer has an impurity concentration of 1×10atms/cmor higher and lower than 2×10atms/cm, and a thickness of 2 μm or larger and smaller than 15 μm.