The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2005
Filed:
Oct. 18, 2002
Hideki Takahashi, Tokyo, JP;
Shinji Aono, Tokyo, JP;
Hideki Takahashi, Tokyo, JP;
Shinji Aono, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device and a manufacturing method therefor are provided, the semiconductor device having a good reverse recovery characteristic, and having no reduction in breakdown voltage because no defect occurs in the upper main surface of a Si substrate even when wires are bonded onto an anode electrode. A semiconductor device includes a Si substrate including an Ncathode layer and an Nlayer. An impurity such as platinum whose barrier height is less than that of silicon is introduced into upper regions of the Nlayer where P anode layers are not formed, thereby forming Schottky junction regions. A barrier metal is formed between the Si substrate and an anode electrode.