The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2007
Filed:
May. 06, 2005
Hideki Takahashi, Tokyo, JP;
Shinji Aono, Tokyo, JP;
Hideki Takahashi, Tokyo, JP;
Shinji Aono, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
It is an object to obtain a semiconductor device comprising a channel stop structure which is excellent in an effect of stabilizing a breakdown voltage and a method of manufacturing the semiconductor device. A silicon oxide film () is formed on an upper surface of an N-type silicon substrate (). An N-type impurity implantation region () is formed in an upper surface () of the N-type silicon substrate () in a portion exposed from the silicon oxide film (). A deeper trench () than the N-type impurity implantation region () is formed in the upper surface () of the N-type silicon substrate (). A silicon oxide film () is formed on an inner wall of the trench (). A polysilicon film () is formed to fill in the trench (). An aluminum electrode () is formed on the upper surface () of the N-type silicon substrate (). The aluminum electrode () is provided in contact with an upper surface of the polysilicon film () and the upper surface () of the N-type silicon substrate (). The aluminum electrode () is extended over the silicon oxide film () to constitute a field plate.