The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2013
Filed:
Sep. 07, 2011
Shinji Aono, Tokyo, JP;
Tadaharu Minato, Tokyo, JP;
Shinji Aono, Tokyo, JP;
Tadaharu Minato, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A trench gate IGBT designed to reduce on-state voltage while maintaining the withstand voltage, including a first drift layer formed on a first main surface of a buffer layer, a second drift layer of the first conductivity type formed on said first drift layer, a base layer of a second conductivity type formed on the second drift layer, an emitter layer of the first conductivity type selectively formed in the surface of the base layer, and a gate electrode buried from the surface of the emitter layer through into the second drift layer with a gate insulating film therebetween, wherein said first drift layer has a structure in which a first layer of the first conductivity type and a second layer of the second conductivity type are repeated in a horizontal direction.