The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2008
Filed:
Mar. 11, 2005
Shinji Aono, Tokyo, JP;
Kenzo Yamamoto, Legal Representative, Nara, JP;
Ikuko Yamamoto, Legal Representative, Nara, JP;
Hideki Takahashi, Tokyo, JP;
Shinji Aono, Tokyo, JP;
Kenzo Yamamoto, legal representative, Nara, JP;
Ikuko Yamamoto, legal representative, Nara, JP;
Hideki Takahashi, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Chiyoda-Ku, Tokyo, JP;
Abstract
To provide a reverse conducting semiconductor device in which an insulated gate bipolar transistor and a free wheeling diode excellent in recovery characteristic are monolithically formed on a substrate, the free wheeling diode including; a second conductive type base layer to constitute the insulated gate bipolar transistor; a first conductive type base layer for constituting the insulated gate bipolar transistor, an anode electrode which is an emitter electrode covering a first conductive type emitter layer and the second conductive type base layer, a cathode electrode which is a collector electrode covering the first conductive type base layer and a second conductive type collector layer formed on the part of the first conductive type base layer, wherein a short lifetime region is formed on a part of the first conductive type base layer.