Sheng-Hung Shih

This inventor holds 68 USPTO granted patents and 21 published patent applications, primarily in Ferroelectric Memory (CPC class H01L). Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2015-2026.

USPTO Granted Patents = 68 (Patent Applications = 21)

% Patents Active = 95.6

Average Co-Inventor Count = 5.7

ph-index = 7

Forward Citations = 198(Granted Patents)

Forward Citations (Not Self Cited) = 178(Dec 10, 2025)

Inventors with similar research interests:

Company Filing History:

68 out of 42,759

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2015-2026

Loading Chart...

Areas of Expertise:

Ferroelectric Random-Access Memory

FeRAM

Semiconductor Device

Integrated Circuit

MFM Device

Blocking Layer

RRAM Cell Structure

Fabrication Method

Memory Cell

Electrode Structure

Interfacial Layer

Decoupling Capacitor

68 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12666945 - Integration of via and bottom electrode for memory cell (2026-06-23),

2. 12666624 - Method of forming a memory cell having an offset interconnect via extending through a hard mask with variable thickness (2026-06-23),

3. 12648149 - Trench-type beol memory cell (2026-06-02),

4. 12621998 - Method and structures pertaining to improved ferroelectric random-access memory (FeRAM) (2026-05-05),

5. 12593458 - Semiconductor device (2026-03-31),

6. 12593454 - Ferroelectric tunnel junction structure with L-shaped spacers (2026-03-31),

7. 12457751 - Interfacial layer with high texture uniformity for ferroelectric layer enhancement (2025-10-28),

8. 12432929 - Ferroelectric memory device with blocking layer (2025-09-30),

9. 12419056 - Integrated circuit and method for manufacturing the same (2025-09-16),

10. 12369327 - MFM device with an enhanced bottom electrode (2025-07-22),

11. 12356630 - Semiconductor device and method of forming the same (2025-07-08),

12. 12238934 - Method of fabricating semiconductor device comprising ferroelectric layer (2025-02-25),

13. 12171104 - Method and structures pertaining to improved ferroelectric random-access memory (FeRAM) (2024-12-17),

14. 12167611 - FeRAM MFM structure with selective electrode etch (2024-12-10),

15. 12114509 - FeRAM decoupling capacitor (2024-10-08),

Title: Inventor Sheng-Hung Shih: Pioneering Innovations in Hsinchu

Introduction: Sheng-Hung Shih is a distinguished inventor known for his groundbreaking contributions to the field of technology, particularly in Hsinchu, Taiwan.

Latest Patents: Shih holds several patents in the areas of semiconductor technology, renewable energy, and telecommunications, showcasing his versatility and ingenuity in various domains.

Career Highlights: With a career spanning over two decades, Shih has worked with leading research institutions and technology companies, playing a pivotal role in the development of cutting-edge solutions that have revolutionized industries.

Collaborations: Shih has collaborated with top engineers, scientists, and researchers globally, fostering a culture of innovation and knowledge exchange that has led to the creation of impactful inventions.

Conclusion: Sheng-Hung Shih's relentless pursuit of innovation and his commitment to pushing the boundaries of technology make him a true visionary in the world of inventions.