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For the Inventor, By the Inventor

Hsinchu, Taiwan

Sheng-Hung Shih

USPTO Granted Patents = 62 

Average Co-Inventor Count = 6.0

ph-index = 7

Forward Citations = 189(Granted Patents)

Forward Citations (Not Self Cited) = 178(Dec 10, 2025)


Inventors with similar research interests:


Company Filing History:

goldMedal62 out of 40,780 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2015-2025

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Areas of Expertise:
Ferroelectric Memory
Ferroelectric Random Access Memory
Integrated Circuit
Semiconductor Device
Memory Cell Structure
Resistance Variable Memory
Magnetoresistive Random Access Memory
Electrode Fabrication
Data Storage Layer
MFM Device
Decoupling Capacitor
RRAM Cell Structure
62 patents (USPTO):Explore Patents
1. 12457751 - Interfacial layer with high texture uniformity for ferroelectric layer enhancement (2025-10-28),
2. 12432929 - Ferroelectric memory device with blocking layer (2025-09-30),
3. 12419056 - Integrated circuit and method for manufacturing the same (2025-09-16),
4. 12369327 - MFM device with an enhanced bottom electrode (2025-07-22),
5. 12356630 - Semiconductor device and method of forming the same (2025-07-08),
6. 12238934 - Method of fabricating semiconductor device comprising ferroelectric layer (2025-02-25),
7. 12171104 - Method and structures pertaining to improved ferroelectric random-access memory (FeRAM) (2024-12-17),
8. 12167611 - FeRAM MFM structure with selective electrode etch (2024-12-10),
9. 12114509 - FeRAM decoupling capacitor (2024-10-08),
10. 12082421 - Semiconductor device and method for manufacturing the same (2024-09-03),
11. 12057154 - Method for efficiently waking up ferroelectric memory (2024-08-06),
12. 11856788 - Semiconductor device and method of fabricating the same (2023-12-26),
13. 11849588 - Semiconductor device and method of forming the same (2023-12-19),
14. 11844286 - Flat bottom electrode via (BEVA) top surface for memory (2023-12-12),
15. 11800720 - Memory cell having a top electrode interconnect arranged laterally from a recess (2023-10-24),

Title: Inventor Sheng-Hung Shih: Pioneering Innovations in Hsinchu

Introduction: Sheng-Hung Shih is a distinguished inventor known for his groundbreaking contributions to the field of technology, particularly in Hsinchu, Taiwan.

Latest Patents: Shih holds several patents in the areas of semiconductor technology, renewable energy, and telecommunications, showcasing his versatility and ingenuity in various domains.

Career Highlights: With a career spanning over two decades, Shih has worked with leading research institutions and technology companies, playing a pivotal role in the development of cutting-edge solutions that have revolutionized industries.

Collaborations: Shih has collaborated with top engineers, scientists, and researchers globally, fostering a culture of innovation and knowledge exchange that has led to the creation of impactful inventions.

Conclusion: Sheng-Hung Shih's relentless pursuit of innovation and his commitment to pushing the boundaries of technology make him a true visionary in the world of inventions.

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