The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2026
Filed:
May. 10, 2023
Taiwan Semiconductor Manufacturing Company, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A ferroelectric tunnel junction (FTJ) includes bottom and top electrodes and a ferroelectric layer disposed between the bottom and top electrodes. A dielectric material is disposed in a space between a peripheral area of the ferroelectric layer and a sidewall of the top electrode. At least one conformal dielectric spacer is deposited. The FTJ is annealed to induce ferroelectric phase crystallization in the ferroelectric layer. The depositing at least one conformal dielectric spacer includes at least one of: (i) prior to the disposing of the dielectric material, depositing an inner conformal dielectric spacer on the peripheral area of the ferroelectric layer and on the sidewall of the top electrode, and/or (ii) after the disposing of the dielectric material, depositing an outer conformal dielectric spacer on dielectric material and on a sidewall of the peripheral area of the ferroelectric layer.