The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2025
Filed:
Aug. 30, 2021
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Tzu-Yu Chen, Kaohsiung, TW;
Hsin-Yu Lai, Hsinchu, TW;
Sheng-Hung Shih, Hsinchu, TW;
Fu-Chen Chang, New Taipei, TW;
Kuo-Chi Tu, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 53/00 (2023.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H10B 53/00 (2023.02); H01L 28/40 (2013.01);
Abstract
A method for fabricating a semiconductor device is provided. The method includes depositing a ferroelectric layer over the substrate; performing a first ionized physical deposition process to deposit a top electrode layer over the ferroelectric layer; patterning the top electrode layer into a top electrode; and patterning the ferroelectric layer to into a ferroelectric element below the top electrode.