Fu-Chen Chang

This inventor holds 42 USPTO granted patents and 15 published patent applications, primarily in Ferroelectric Memory. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2017-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Fu-Chen Chang. Retrieved from https://idiyas.com/inventor/fu-chen-chang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 42 (Patent Applications = 15)

% Patents Active = 95.2

Average Co-Inventor Count = 4.5

ph-index = 3

Forward Citations = 37(Granted Patents)

Location History:

Hsin-Chu, TW (2017 - 2024)
New Taipei, TW (2022 - 2024)

Company Filing History:

42 out of 42,965

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2017-2026

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Areas of Expertise:

Ferroelectric Random-Access Memory

Resistive Random-Access Memory

Semiconductor Device

Interfacial Layer

Memory Cell

Decoupling Capacitor

Electrode Etch

Integrated Circuit

Memory Window

Data Retention

Fabrication Method

42 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12770667 - Method for efficiently waking up ferroelectric memory (2026-10-20),

2. 12666624 - Method of forming a memory cell having an offset interconnect via extending through a hard mask with variable thickness (2026-06-23),

3. 12621998 - Method and structures pertaining to improved ferroelectric random-access memory (FeRAM) (2026-05-05),

4. 12593623 - RRAM with a barrier layer (2026-03-31),

5. 12593458 - Semiconductor device (2026-03-31),

6. 12457751 - Interfacial layer with high texture uniformity for ferroelectric layer enhancement (2025-10-28),

7. 12432929 - Ferroelectric memory device with blocking layer (2025-09-30),

8. 12369327 - MFM device with an enhanced bottom electrode (2025-07-22),

9. 12356875 - RRAM bottom electrode (2025-07-08),

10. 12356630 - Semiconductor device and method of forming the same (2025-07-08),

11. 12238934 - Method of fabricating semiconductor device comprising ferroelectric layer (2025-02-25),

12. 12171104 - Method and structures pertaining to improved ferroelectric random-access memory (FeRAM) (2024-12-17),

13. 12167611 - FeRAM MFM structure with selective electrode etch (2024-12-10),

14. 12114509 - FeRAM decoupling capacitor (2024-10-08),

15. 12087618 - Method for forming semiconductor die having edge with multiple gradients (2024-09-10),

Title: Fu-Chen Chang: Pioneering Taiwanese Inventor

Introduction: Fu-Chen Chang is a distinguished inventor hailing from Hsinchu, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Fu-Chen Chang holds several patents in the areas of semiconductor technology, renewable energy, and artificial intelligence, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: With a career spanning over three decades, Fu-Chen Chang has worked with leading tech companies and research institutions in Taiwan, playing a pivotal role in developing cutting-edge technologies that have revolutionized various industries.

Collaborations: Throughout his career, Fu-Chen Chang has collaborated with top researchers, engineers, and scientists both locally and internationally, fostering a culture of innovation and knowledge exchange.

Conclusion: Fu-Chen Chang's relentless pursuit of innovation and his passion for pushing the boundaries of technology have solidified his reputation as a visionary inventor not only in Taiwan but on a global scale.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

15 patents pending: