The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2026
Filed:
Dec. 01, 2023
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Tzu-Yu Chen, Kaohsiung City, TW;
Sheng-Hung Shih, Hsinchu City, TW;
Fu-Chen Chang, New Taipei City, TW;
Kuo-Chi Tu, Hsinchu City, TW;
Wen-Ting Chu, Kaohsiung City, TW;
Alexander Kalnitsky, San Francisco, CA (US);
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 53/30 (2023.01); H10D 1/68 (2025.01);
U.S. Cl.
CPC ...
H10B 53/30 (2023.02); H10D 1/692 (2025.01);
Abstract
A semiconductor device includes a substrate, a bottom electrode, a ferroelectric layer, a noble metal electrode, and a non-noble metal electrode. The bottom electrode is over the substrate. The ferroelectric layer is over the bottom electrode. The noble metal electrode is over the ferroelectric layer. The non-noble metal electrode is over the noble metal electrode.