The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2025
Filed:
Jan. 05, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Tzu-Yu Chen, Kaohsiung, TW;
Chu-Jie Huang, Tainan, TW;
Wan-Chen Chen, Hsinchu, TW;
Fu-Chen Chang, New Taipei, TW;
Sheng-Hung Shih, Hsinchu, TW;
Kuo-Chi Tu, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Various embodiments of the present disclosure are directed towards a memory cell comprising a blocking layer configured to block diffusion of metal from an electrode of the memory cell to a ferroelectric layer of the memory cell. More particularly, the blocking layer and the ferroelectric layer are between a top electrode of the memory cell and a bottom electrode of the memory cell, which both comprise metal. Further, the blocking layer is between the ferroelectric layer and the electrode, which corresponds to one of the top and bottom electrodes. In some embodiments, the metal of the one of the top and bottom electrodes has a lowest electronegativity amongst the metals of top and bottom electrodes and is hence the most reactive and likely to diffuse amongst the metals of top and bottom electrodes.