Danbury, CT, United States of America

Sharad N Yedave

This inventor holds 24 USPTO granted patents and 6 published patent applications and 7 EPO patents, primarily in Ion Implantation Technology. Top assignees: Entegris, Inc., Advanced Technology Materials, Inc., Other. Active years: 2003-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sharad N Yedave. Retrieved from https://idiyas.com/inventor/sharad-n-yedave

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 24 

% Patents Active = 100.0

 

Average Co-Inventor Count = 5.7

ph-index = 6

Forward Citations = 105(Granted Patents)


Location History:

  • College Park, MD (US) (2003)
  • Danbury, CT (US) (2011 - 2023)

Company Filing History:


Years Active: 2003-2023

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Areas of Expertise:
Ion Implantation
Fluorine Methods
Silicon Precursors
Gallium Processes
Hydrogen Mixtures
Plasma Immersion
Dopant Gas Compositions
Semiconductor Processing
Isotopically-Enriched Boron
Carbon Dopant Gas
Arc Chamber Materials
Source Life Performance
24 patents (USPTO):Explore Patents

Title: **Innovations by Sharad N Yedave: Pioneering Advances in Ion Implantation Technologies**

Introduction

Sharad N Yedave, based in Danbury, CT, is a prolific inventor holding an impressive portfolio of 23 patents. His work predominantly focuses on advanced ion implantation systems, demonstrating innovative approaches to enhancing the performance and longevity of semiconductor manufacturing technologies.

Latest Patents

Among his latest contributions are two significant patents. The first, concerning "Germanium tetrafluoride and hydrogen mixtures for an ion implantation system," introduces methods and assemblies designed for delivering a specific mixture of germanium tetrafluoride (GeF) and hydrogen (H) gases. This mixture, with hydrogen present in the range of 25% to 67%, effectively prevents the volatilization of cathode materials, thereby improving the performance and lifespan of ion implantation apparatuses. These gas mixtures are also reported to enhance current gain and reduce peak power during ion implantation procedures.

The second patent focuses on an "Ion implantation system with a mixture of arc chamber materials." This advancement describes a system that generates ionic species using at least one ionizable gas within an arc chamber composed of multiple arc chamber materials. This innovative design leads to higher beam currents for desired ionic species, while minimizing metal deposit formation during operations. As a result, it extends the source life and enhances overall system performance.

Career Highlights

Sharad N Yedave has made significant contributions to the field through his tenure at notable companies such as Entegris, Inc. and Advanced Technology Materials, Inc. His extensive experience within these organizations underscores his expertise and commitment to advancing semiconductor technologies.

Collaborations

Throughout his career, Sharad has collaborated with esteemed colleagues, including Ying Tang and Joseph D Sweeney. These partnerships have undoubtedly enriched his work, leading to innovative solutions and advancements within the industry.

Conclusion

Sharad N Yedave's ongoing innovations in ion implantation technology reflect his dedication to improving manufacturing efficiencies and device performance. His patents stand as a testament to his inventive spirit and technical acumen, solidifying his role as a key figure in the semiconductor field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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