Entegris, Inc.

Advanced Technology Materials, Inc.

Other

Sharad N Yedave

Ying Tang

Joseph D Sweeney

Oleg Byl

Robert E Kaim

Barry Lewis Chambers

Edward Edmiston Jones

Peng Zou

Joseph Robert Despres

Richard S Ray

Steven E Bishop

Edward A Sturm

W Karl Olander

David James Eldridge

Steven G Sergi

Bryan Clark Hendrix

Jose I Arno

Tianniu Chen

Ajay Prabhakar Malshe

William C Russell

Frank DiMeo, Jr

James A Dietz

Gregory T Stauf

William David Brown

Jeffrey W Neuner

Paul J Marganski

Deepak G Bhat

James J Mayer

Lin Feng

Oleg Bly

Karl W Olander

Steven Sergi

The current disclosure is directed to methods and assemblies configured to deliver a mixture of germanium tetrafluoride (GeF) and hydrogen (H) gases to an ion implantation apparatus, so His present in an amount in the range of 25%-67% (volume) of the gas mixture, or the GeFand Hare present in a volume ratio (GeF:H) in the range of 3:1 to 33:67. The use of the Hgas in an amount in mixture or relative to the GeFgas prevents the volatilization of cathode material, thereby improving performance and lifetime of the ion implantation apparatus. Gas mixtures according to the disclosure also result in a significant Gecurrent gain and Wpeak reduction during au ion implantation procedure.

Germanium tetraflouride and hydrogen mixtures for an ion implantation system

A system and method for ion implantation is described, which includes a gas or gas mixture including at least one ionizable gas used to generate ionic species and an arc chamber that includes two or more different arc chamber materials. Using the system ionic species are generated in the arc chamber with liner combination, and one or more desired ionic species display a higher beam current among the ionic species generated, which is facilitated by use of the different materials. In turn improved implantation of the desired ionic species into a substrate can be achieved. Further, the system can minimize formation of metal deposits during system operation, thereby extending source life and promoting improved system performance.

Ion implantation system with mixture of arc chamber materials

Described are plasma immersion ion implantation methods that use multiple precursor gases, particularly for the purpose of controlling an amount of a specific atomic dopant species that becomes implanted into a workpiece relative to other atomic species that also become implanted into the workpiece during the implantation process.

Plasma immersion methods for ion implantation

A system and method for fluorine ion implantation is described, which includes a fluorine gas source used to generate a fluorine ion species for implantation to a subject, and an arc chamber that includes one or more non-tungsten materials (graphite, carbide, fluoride, nitride, oxide, ceramic). The system minimizes formation of tungsten fluoride during system operation, thereby extending source life and promoting improved system performance. Further, the system can include a hydrogen and/or hydride gas source, and these gases can be used along with the fluorine gas to improve source lifetime and/or beam current.

Fluorine ion implantation system with non-tungsten materials and methods of using

A method and system for fluorine ion implantation is described, where a fluorine compound capable of forming multiple fluorine ionic species is introduced into an ion implanter at a predetermined flow rate. Fluorine ionic species are generated at a predetermined arc power and source magnetic field, providing an optimized beam current for the desired fluorine ionic specie. The desired fluorine ionic specie, such as one having multiple fluorine atoms, is implanted into the substrate under the selected operating conditions.

Fluorine ion implantation method and system

The current disclosure is directed to methods and assemblies configured to deliver a mixture of germanium tetrafluoride (GeF) and hydrogen (H) gases to an ion implantation apparatus, so His present in an amount in the range of 25%-67% (volume) of the gas mixture, or the GeFand Hare present in a volume ratio (GeF:H) in the range of 3:1 to 33:67. The use of the Hgas in an amount in mixture or relative to the GeFgas prevents the volatilization of cathode material, thereby improving performance and lifetime of the ion implantation apparatus. Gas mixtures according to the disclosure also result in a significant Gecurrent gain and Wpeak reduction during an ion implantation procedure.

Compositions, systems, and methods are described for implanting silicon and/or silicon ions in a substrate, involving generation of silicon and/or silicon ions from corresponding silicon precursor compositions, and implantation of the silicon and/or silicon ions in the substrate.

Silicon implantation in substrates and provision of silicon precursor compositions therefor

A hydrogenated isotopically enriched boron trifluoride (BF3) dopant source gas composition. The composition contains (i) boron trifluoride isotopically enriched above natural abundance in boron of atomic mass 11 (UB), and (ii) hydrogen in an amount of from 2 to 6.99 vol. %, based on total volume of boron trifluoride and hydrogen in the composition. Also described are methods of use of such dopant source gas composition, and associated apparatus therefor.

Hydrogenated isotopically enriched boront trifluoride dopant source gas composition

An ion source apparatus for ion implantation is described, including an ion source chamber, and a consumable structure in or associated with the ion source chamber, in which the consumable structure includes a solid dopant source material susceptible to reaction with a reactive gas for release of dopant in gaseous form to the ion source chamber, wherein the solid dopant source material comprises gallium nitride, gallium oxide, either of which may be isotopically enriched with respect to a gallium isotope, or combinations thereof.

Ion implantation processes and apparatus using gallium

A gas supply assembly is described for delivery of gas to a plasma flood gun which includes an inert gas and a fluorine-containing gas, wherein the assembly is configured to deliver a volume of the fluorine-containing gas to the flood gun that is not greater than 10% of a total volume of the fluorine-containing and inert gasses. The fluorine-containing gas can generate volatile reaction product gases from material deposits in the plasma flood gun, and to effect re-metallization of a plasma generation filament in the plasma flood gun. In combination with the gas amounts, the assembly and methods can use gas flow rates to optimize the cleaning effect and reduce filament material loss from the plasma flood gun during use.

Methods and assemblies using fluorine containing and inert gases for plasma flood gun operation

Ion implantation processes and systems are described, in which carbon dopant source materials are utilized to effect carbon doping. Various gas mixtures are described, including a carbon dopant source material, as well as co-flow combinations of gases for such carbon doping. Provision of in situ cleaning agents in the carbon dopant source material is described, as well as specific combinations of carbon dopant source gases, hydride gases, fluoride gases, noble gases, oxide gases and other gases.

Carbon dopant gas and co-flow for implant beam and source life performance improvement

Apparatus and method for use of solid dopant phosphorus and arsenic sources and higher order phosphorus or arsenic implant source material are described. In various implementations, solid phosphorus-comprising or arsenic-comprising materials are provided in the ion source chamber for generation of dimer or tetramer implant species. In other implementations, the ion implantation is augmented by use of a reactor for decomposing gaseous phosphorus-comprising or arsenic-comprising materials to form gas phase dimers and tetramers for ion implantation.

Phosphorus or arsenic ion implantation utilizing enhanced source techniques

Cleaning of an ion implantation system or components thereof, utilizing temperature and/or a reactive cleaning reagent enabling growth/etching of the cathode in an indirectly heated cathode for an ion implantation system by monitoring the cathode bias power and taking corrective action depending upon compared values to etch or regrow the cathode.

Growing community of inventors

Danbury, CT, United States of America

Sharad N Yedave