The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2021
Filed:
Aug. 14, 2014
Applicant:
Entegris, Inc., Billerica, MA (US);
Inventors:
Ying Tang, Brookfield, CT (US);
Joseph D. Sweeney, New Milford, CT (US);
Tianniu Chen, Westford, MA (US);
James J. Mayer, Fischer, TX (US);
Richard S. Ray, Phoenix, AZ (US);
Oleg Byl, Southbury, CT (US);
Sharad N. Yedave, Danbury, CT (US);
Robert Kaim, Brookline, MA (US);
Assignee:
Entegris, Inc., Billerica, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/265 (2006.01); H01J 37/317 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/265 (2013.01); H01J 37/3171 (2013.01); H01J 37/32412 (2013.01); H01J 2237/006 (2013.01); H01J 2237/08 (2013.01); H01L 21/26506 (2013.01); H01L 21/26546 (2013.01);
Abstract
Compositions, systems, and methods are described for implanting silicon and/or silicon ions in a substrate, involving generation of silicon and/or silicon ions from corresponding silicon precursor compositions, and implantation of the silicon and/or silicon ions in the substrate.