The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 05, 2021

Filed:

Jun. 17, 2020
Applicant:

Entegris, Inc., Billerica, MA (US);

Inventors:

Ying Tang, Brookfield, CT (US);

Sharad N. Yedave, Danbury, CT (US);

Joseph R. Despres, Middletown, CT (US);

Joseph D. Sweeney, New Milford, CT (US);

Oleg Byl, Southbury, CT (US);

Assignee:

Entegris, Inc., Billerica, MA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/317 (2006.01); H01J 37/08 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3171 (2013.01); H01J 37/08 (2013.01);
Abstract

A system and method for ion implantation is described, which includes a gas or gas mixture including at least one ionizable gas used to generate ionic species and an arc chamber that includes two or more different arc chamber materials. Using the system ionic species are generated in the arc chamber with liner combination, and one or more desired ionic species display a higher beam current among the ionic species generated, which is facilitated by use of the different materials. In turn improved implantation of the desired ionic species into a substrate can be achieved. Further, the system can minimize formation of metal deposits during system operation, thereby extending source life and promoting improved system performance.


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