The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 05, 2018

Filed:

Aug. 12, 2009
Applicants:

Joseph D. Sweeney, Winsted, CT (US);

Sharad N. Yedave, Danbury, CT (US);

Oleg Byl, Southbury, CT (US);

Robert Kaim, Brookline, MA (US);

David Eldridge, Liberty Hill, TX (US);

Lin Feng, Orange, CT (US);

Steven E. Bishop, Corrales, NM (US);

W. Karl Olander, Indian Shores, FL (US);

Ying Tang, Brookfield, CT (US);

Inventors:

Joseph D. Sweeney, Winsted, CT (US);

Sharad N. Yedave, Danbury, CT (US);

Oleg Byl, Southbury, CT (US);

Robert Kaim, Brookline, MA (US);

David Eldridge, Liberty Hill, TX (US);

Lin Feng, Orange, CT (US);

Steven E. Bishop, Corrales, NM (US);

W. Karl Olander, Indian Shores, FL (US);

Ying Tang, Brookfield, CT (US);

Assignee:

Entegris, Inc., Danbury, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D 5/12 (2006.01); H01J 37/317 (2006.01); C23C 14/48 (2006.01); C23C 14/54 (2006.01); C23C 14/56 (2006.01); H01J 37/08 (2006.01); H01J 37/16 (2006.01); H01J 37/18 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3171 (2013.01); C23C 14/48 (2013.01); C23C 14/54 (2013.01); C23C 14/564 (2013.01); H01J 37/08 (2013.01); H01J 37/16 (2013.01); H01J 37/18 (2013.01); H01J 2237/082 (2013.01); H01J 2237/22 (2013.01);
Abstract

Cleaning of an ion implantation system or components thereof, utilizing temperature and/or a reactive cleaning reagent enabling growth/etching of the cathode in an indirectly heated cathode for an ion implantation system by monitoring the cathode bias power and taking corrective action depending upon compared values to etch or regrow the cathode.


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