The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2022
Filed:
Mar. 15, 2019
Entegris, Inc., Billerica, MA (US);
Oleg Byl, Southbury, CT (US);
Ying Tang, Brookfield, CT (US);
Joseph R. Despres, Middletown, CT (US);
Joseph Sweeney, New Milford, CT (US);
Sharad N. Yedave, Danbury, CT (US);
ENTEGRIS, INC., Billerica, MA (US);
Abstract
The current disclosure is directed to methods and assemblies configured to deliver a mixture of germanium tetrafluoride (GeF) and hydrogen (H) gases to an ion implantation apparatus, so His present in an amount in the range of 25%-67% (volume) of the gas mixture, or the GeFand Hare present in a volume ratio (GeF:H) in the range of 3:1 to 33:67. The use of the Hgas in an amount in mixture or relative to the GeFgas prevents the volatilization of cathode material, thereby improving performance and lifetime of the ion implantation apparatus. Gas mixtures according to the disclosure also result in a significant Gecurrent gain and Wpeak reduction during an ion implantation procedure.