The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 23, 2018

Filed:

Aug. 19, 2015
Applicant:

Entegris, Inc., Billerica, MA (US);

Inventors:

Oleg Byl, Southbury, CT (US);

Sharad N. Yedave, Danbury, CT (US);

Joseph D. Sweeney, New Milford, CT (US);

Barry Lewis Chambers, Midlothian, VA (US);

Ying Tang, Brookfield, CT (US);

Assignee:

Entegris, Inc., Billerica, MA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/00 (2006.01); H01L 21/265 (2006.01); H01J 37/08 (2006.01); H01J 37/317 (2006.01); H01J 37/244 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2658 (2013.01); H01J 37/08 (2013.01); H01J 37/244 (2013.01); H01J 37/3171 (2013.01); H01L 31/18 (2013.01); H01J 2237/006 (2013.01); H05K 999/99 (2013.01);
Abstract

Apparatus and method for use of solid dopant phosphorus and arsenic sources and higher order phosphorus or arsenic implant source material are described. In various implementations, solid phosphorus-comprising or arsenic-comprising materials are provided in the ion source chamber for generation of dimer or tetramer implant species. In other implementations, the ion implantation is augmented by use of a reactor for decomposing gaseous phosphorus-comprising or arsenic-comprising materials to form gas phase dimers and tetramers for ion implantation.


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