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For the Inventor, By the Inventor

Gyeonggi-do, South Korea

Se Ho Lee

USPTO Granted Patents = 43 

Average Co-Inventor Count = 2.5

ph-index = 5

Forward Citations = 81(Granted Patents)


Location History:

  • Ichon-si, KR (2015)
  • Gyeonggi-do, KR (2012 - 2024)
  • Icheon-si, KR (2015 - 2024)
  • Yongin-si, KR (2020 - 2024)

Company Filing History:

goldMedal39 out of 11,004 
 
Skhynix Inc.
 patents
silverMedal4 out of 6,228 
 
Hynix Semiconductor Inc.
 patents

Years Active: 2012-2025

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Areas of Expertise:
Nonvolatile Memory Device
Ferroelectric Layer
Resistance Change Layer
Semiconductor Device
Three-Dimensional Memory
Phase Change Memory
Data Storage Device
Resistive Memory Device
Temperature Control Method
Memory Fabrication Method
Integrated Circuit Device
Memory System Optimization
43 patents (USPTO):Explore Patents
1. 12340119 - Memory system and operating method of the memory system (2025-06-24),
2. 12108611 - Nonvolatile memory device having resistance change layer (2024-10-01),
3. 12108606 - Nonvolatile memory device having a ferroelectric layer (2024-10-01),
4. 12082420 - Semiconductor device including interlayer insulation structure including metal-organic framework (2024-09-03),
5. 11922062 - Controller and operating method thereof (2024-03-05),
6. 11871569 - Nonvolatile memory device having multiple numbers of channel layers (2024-01-09),
7. 11825660 - Semiconductor device having ferroelectric material and method of fabricating the same (2023-11-21),
8. 11812618 - Nonvolatile memory device including ferroelectric layer having negative capacitance (2023-11-07),
9. 11800719 - Nonvolatile memory device having a ferroelectric layer (2023-10-24),
10. 11792995 - Semiconductor device including ferroelectric layer and method of manufacturing the same (2023-10-17),
11. 11764291 - Method of diffusing nitrogen into a tunnel layer of a nonvolatile memory (2023-09-19),
12. 11664413 - Semiconductor device including multilayer stack including seed layer and high-k dielectric layer (2023-05-30),
13. 11482667 - Nonvolatile memory device having a resistance change layer and a plurality of electrode pattern layers (2022-10-25),
14. 11469272 - Nonvolatile memory device having resistance change memory layer (2022-10-11),
15. 11456318 - Nonvolatile memory device having a ferroelectric layer (2022-09-27),

Title: Innovations of Se Ho Lee in Nonvolatile Memory Devices

Introduction: Se Ho Lee, an influential inventor based in Gyeonggi-do, South Korea, has made significant contributions to the field of nonvolatile memory devices. With a remarkable portfolio of 42 patents, his work has paved the way for advancements in memory technology, benefiting various industries and enhancing data storage solutions.

Latest Patents: Two of Se Ho Lee's latest patents focus on innovative nonvolatile memory devices. The first patent describes a nonvolatile memory device featuring a resistance change layer. This device comprises a substrate, a resistance change layer, and gate electrode layers. The resistance change layer incorporates movable oxygen vacancies or metal ions, thereby enabling improved data retention and efficiency. The second patent involves a nonvolatile memory device containing a ferroelectric layer. This device includes a substrate with a gate structure and a channel layer situated on the ferroelectric layer, enhancing the overall functionality and performance of the memory device.

Career Highlights: Throughout his career, Se Ho Lee has demonstrated exceptional expertise in semiconductor technology, particularly during his tenure at prominent companies such as SK Hynix Inc. and Hynix Semiconductor Inc. His dedication and innovative spirit have allowed him to develop cutting-edge solutions in the realm of memory devices.

Collaborations: Se Ho Lee has collaborated with talented professionals like Hyangkeun Yoo and Jae Gil Lee. These collaborations have fostered an environment of innovation, driving forward the development of advanced memory technologies and contributing to his impressive patent portfolio.

Conclusion: Se Ho Lee's impactful work in the development of nonvolatile memory devices stands as a testament to his inventive spirit and expertise in the field. With a substantial number of patents to his name, his contributions continue to influence the landscape of memory technology, paving the way for future advancements and innovations.

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