The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2023
Filed:
May. 11, 2021
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventors:
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 51/30 (2023.01); G11C 11/22 (2006.01); H10B 51/20 (2023.01); H01L 21/28 (2006.01); H01L 29/78 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H10B 51/30 (2023.02); G11C 11/2255 (2013.01); H01L 29/40111 (2019.08); H01L 29/518 (2013.01); H01L 29/78391 (2014.09); H10B 51/20 (2023.02);
Abstract
A semiconductor device according to an embodiment includes a substrate, a bit line structure and a source line structure respectively extending in a direction perpendicular to a surface of the substrate, a semiconductor layer disposed between the bit line structure and the source line structure on a plane parallel to the surface of the substrate, a first ferroelectric layer disposed on a first surface of the semiconductor layer, and a first gate electrode layer disposed on the first ferroelectric layer.