The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2024
Filed:
Sep. 24, 2021
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventors:
Hyangkeun Yoo, Seongnam-si, KR;
Ju Ry Song, Suwon-si, KR;
Se Ho Lee, Yongin-si, KR;
Jae Gil Lee, Seoul, KR;
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/04 (2006.01); H10B 43/27 (2023.01); H01L 29/10 (2006.01); G11C 16/14 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); H01L 29/267 (2006.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/14 (2013.01); H01L 29/1037 (2013.01); H01L 29/267 (2013.01);
Abstract
A nonvolatile memory device according to an embodiment includes a substrate, a channel structure extending in a direction perpendicular to the substrate; a charge storage structure disposed to be in contact with the channel structure; and a cell electrode structure disposed to be in contact with the charge storage structure in a lateral direction, wherein the channel structure comprises a hole conduction layer and an electron conduction layer.