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For the Inventor, By the Inventor

Icheon, South Korea

Hyangkeun Yoo

This inventor holds 51 USPTO granted patents and 4 published patent applications, primarily in Ferroelectric Memory. Top assignee: Skhynix Inc.. Active years: 2019-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hyangkeun Yoo. Retrieved from https://idiyas.com/inventor/hyangkeun-yoo

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 51 

% Patents Active = 100.0

Average Co-Inventor Count = 1.6

ph-index = 5

Forward Citations = 84(Granted Patents)

Forward Citations (Not Self Cited) = 78(Dec 10, 2025)


Location History:

  • Icheon, KR (2020)
  • Gyeonggi-do, KR (2022 - 2023)
  • Icheon-si, KR (2019 - 2024)
  • Seongnam-si, KR (2020 - 2024)

Company Filing History:

goldMedal51 out of 11,659 
 
Skhynix Inc.
 patents

Years Active: 2019-2025

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Areas of Expertise:
Ferroelectric Components
Nonvolatile Memory
Resistance Change Layer
Semiconductor Device
Three-Dimensional Structure
Vertical Memory Device
Fabrication Methods
Channel Structure
Negative Capacitance
Electrode Pattern Layers
Ferroelectric Layer
Induction Layer
51 patents (USPTO):Explore Patents
1. 12382846 - Ferroelectric components and cross point array devices including the ferroelectric components (2025-08-05),
2. 12108611 - Nonvolatile memory device having resistance change layer (2024-10-01),
3. 12108606 - Nonvolatile memory device having a ferroelectric layer (2024-10-01),
4. 12051751 - Ferroelectric memory device (2024-07-30),
5. 11871569 - Nonvolatile memory device having multiple numbers of channel layers (2024-01-09),
6. 11848193 - Ferroelectric semiconductor device and method of manufacturing the same (2023-12-19),
7. 11825660 - Semiconductor device having ferroelectric material and method of fabricating the same (2023-11-21),
8. 11812618 - Nonvolatile memory device including ferroelectric layer having negative capacitance (2023-11-07),
9. 11800719 - Nonvolatile memory device having a ferroelectric layer (2023-10-24),
10. 11515419 - Ferroelectric semiconductor device and method of manufacturing the same (2022-11-29),
11. 11508846 - Ferroelectric memory device (2022-11-22),
12. 11502248 - Ferroelectric components and cross point array devices including the ferroelectric components (2022-11-15),
13. 11488979 - Semiconductor device of three-dimensional structure including ferroelectric layer (2022-11-01),
14. 11482667 - Nonvolatile memory device having a resistance change layer and a plurality of electrode pattern layers (2022-10-25),
15. 11469272 - Nonvolatile memory device having resistance change memory layer (2022-10-11),

Title: The Innovative Journey of Inventor Hyangkeun Yoo

Introduction: Hyangkeun Yoo, a talented male inventor hailing from Icheon-si, South Korea, has made significant contributions to the field of innovations with his creative mind and dedication.

Latest Patents: Hyangkeun Yoo's latest patents showcase his commitment to pushing the boundaries of technology and design, with a focus on improving everyday life through his inventions.

Career Highlights: Throughout his illustrious career, Hyangkeun Yoo has been recognized for his groundbreaking work in various industries, earning him a reputation as a visionary inventor. His innovative spirit and problem-solving skills have led to the creation of patents that have positively impacted society.

Collaborations: Hyangkeun Yoo has collaborated with leading companies, research institutions, and universities to further his inventions and bring them to market. His ability to work with diverse teams and experts has been instrumental in the success of his projects.

Conclusion: In conclusion, Hyangkeun Yoo stands as a shining example of an inventor who has consistently pushed the boundaries of innovation. His passion for creating solutions to real-world problems has cemented his legacy in the world of inventions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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