The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2023
Filed:
Jul. 25, 2022
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Assignee:
SK hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H10B 51/30 (2023.01); H10B 43/10 (2023.01); H10B 43/35 (2023.01);
U.S. Cl.
CPC ...
H10B 51/30 (2023.02); H10B 43/10 (2023.02); H10B 43/35 (2023.02);
Abstract
A nonvolatile memory device according to an aspect of the present disclosure includes a substrate having a channel layer, a gate dielectric layer structure disposed on the channel layer, a ferroelectric layer disposed on the gate dielectric layer structure, and a gate electrode layer disposed on the ferroelectric layer. The gate dielectric layer structure has a positive capacitance. The ferroelectric layer has a negative capacitance. The gate dielectric layer structure includes a charge tunneling layer, a charge trap layer and a charge barrier layer disposed on the channel layer.