The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 2023
Filed:
Oct. 19, 2022
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventor:
Hyangkeun Yoo, Icheon-si, KR;
Assignee:
SK HYNIX INC., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H10B 51/00 (2023.01);
U.S. Cl.
CPC ...
H01L 29/78391 (2014.09); H01L 29/0847 (2013.01); H01L 29/516 (2013.01); H01L 29/6684 (2013.01); H10B 51/00 (2023.02);
Abstract
A ferroelectric semiconductor device includes a substrate having a channel structure, a trench pattern having a bottom surface and a sidewall surface in the channel structure, a dielectric layer disposed on the bottom surface and the sidewall surface of the trench pattern, and a gate electrode layer disposed on the dielectric layer. The dielectric layer includes a ferroelectric layer pattern and a non-ferroelectric layer pattern that are disposed along the sidewall surface of the trench pattern.