The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2024

Filed:

Sep. 10, 2021
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventors:

Won Tae Koo, Icheon-si, KR;

Jae Hyun Han, Icheon-si, KR;

Se Ho Lee, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 51/20 (2023.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H10B 51/20 (2023.02); H01L 29/0649 (2013.01);
Abstract

A semiconductor device according to an embodiment of the present disclosure includes a substrate, a gate structure disposed over the substrate, a dielectric structure disposed to contact a sidewall surface of the gate structure over the substrate, and a channel layer disposed on a sidewall surface of the dielectric structure over the substrate. The gate structure includes a gate electrode layer and an interlayer insulation structure which are alternately stacked. The interlayer insulation structure includes a metal-organic framework layer.


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