The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2026
Filed:
May. 19, 2022
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventors:
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 53/30 (2023.01); H10B 51/30 (2023.01); H10D 1/68 (2025.01);
U.S. Cl.
CPC ...
H10B 53/30 (2023.02); H10B 51/30 (2023.02); H10D 1/684 (2025.01); H10D 1/696 (2025.01);
Abstract
A semiconductor device includes a first electrode, a ferroelectric layer disposed on the first electrode and implementing a negative capacitance, a dielectric structure disposed on the ferroelectric layer and including a first dielectric layer and a second dielectric layer that are alternately stacked, and a second electrode disposed on the dielectric structure. The ferroelectric layer and the dielectric structure are configured to be electrically connected in series to each other. The ferroelectric layer and dielectric structure together have a non-ferroelectric property.