The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2023
Filed:
Aug. 01, 2022
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventors:
Bo Yun Kim, Seongnam-si, KR;
Se Ho Lee, Yongin-si, KR;
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 29/792 (2006.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H01L 29/66833 (2013.01); H01L 21/02332 (2013.01); H01L 29/792 (2013.01); H10B 43/27 (2023.02);
Abstract
In a method of fabricating a nonvolatile memory device according an embodiment, a first tunnel oxide layer, a nitrogen supply layer, and a second tunnel oxide layer having a density lower than that of the first tunnel oxide layer are formed on a substrate. Nitrogen in the nitrogen supply layer is diffused into the second tunnel oxide layer to convert at least a portion of the second tunnel oxide layer into an oxynitride layer.