The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2023
Filed:
Jan. 06, 2021
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventors:
Dong Ik Suh, Icheon-si, KR;
Se Ho Lee, Icheon-si, KR;
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/51 (2006.01); H10B 12/00 (2023.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/40 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01); H10B 12/315 (2023.02);
Abstract
A semiconductor device may include: a first electrode; a second electrode; and a multilayer stack that is interposed between the first electrode and the second electrode and includes a seed layer and a high-k dielectric layer, wherein each of the seed layer and the high-k dielectric layer may have a rocksalt crystal structure, and wherein the high-k dielectric layer may exhibit a dielectric constant (k) of fifty (50) or higher.