Yongin, South Korea

Satoru Yamada

This inventor holds 57 USPTO granted patents and 5 published patent applications, primarily in Semiconductor Devices (CPC class H01L). Top assignee: Samsung Electronics Co., Ltd.. Active years: 2011-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Satoru Yamada. Retrieved from https://idiyas.com/inventor/satoru-yamada-n1fzvk7s

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 57 

% Patents Active = 98.2

Average Co-Inventor Count = 5.3

ph-index = 6

Forward Citations = 185(Granted Patents)

Forward Citations (Not Self Cited) = 169(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Seoul, JP (2018)
  • Seoul, KR (2011 - 2023)
  • Suwon-si, KR (2021 - 2023)
  • Yongin-si, KR (2017 - 2024)

Company Filing History:


Years Active: 2011-2026

Loading Chart...
Areas of Expertise:
Neuromorphic Device
Semiconductor Manufacturing
Memory Devices
Vertical Channels
Resistive Memory
Data Storage Structure
Multi-Direction Channel
Buried Gate Structure
Leakage Current
Bit Line Node Contact
Dummy Metal
Fabrication Methods
57 patents (USPTO):Explore Patents

Title: Innovations by Satoru Yamada in Semiconductor Technology

Introduction: Satoru Yamada is a prominent inventor based in Yongin-si, South Korea, who has made significant contributions to the field of semiconductor technology. With a remarkable portfolio of 54 patents, Yamada's work has played a crucial role in advancing the efficiency and functionality of semiconductor devices. His innovative designs have influenced both the industry and academic research.

Latest Patents: Among Yamada's latest patents are several pivotal inventions pertaining to semiconductor devices. One notable patent describes a semiconductor device comprising a first conductive line and a second conductive line, strategically spaced apart. A unique semiconductor pattern is located between these lines, featuring a first semiconductor pattern that incorporates first-conductivity-type impurities adjacent to the first conductive line. Additionally, a second semiconductor pattern, characterized by second-conductivity-type impurities, is situated next to the second conductive line. This invention also includes a third semiconductor pattern that consists of regions incorporating intrinsic semiconductor layers, enhancing device performance. Another patent outlines a semiconductor device featuring a first stacked structure of alternating insulating patterns and semiconductor patterns on a substrate, showcasing an innovative configuration designed to improve electrical characteristics.

Career Highlights: Satoru Yamada's career is marked by consistent innovation and dedication to his work at Samsung Electronics Co., Ltd. His contributions have garnered attention in the semiconductor industry, establishing him as a leading inventor in this technologically advanced field. His patents have not only received approval but have also been recognized for their potential applications in enhancing semiconductor performance.

Collaborations: Yamada collaborates closely with talented coworkers, including Junsoo Kim and Min Hee Cho. Together, they work on groundbreaking projects, leveraging their combined expertise to push the boundaries of semiconductor technology. This collaboration has further strengthened the development of innovative solutions within Samsung Electronics.

Conclusion: Satoru Yamada's impressive patent portfolio and his ongoing contributions to semiconductor technology affirm his status as a key inventor in the field. His innovations are paving the way for future advancements that hold promise for a myriad of applications, ensuring that the semiconductor industry continues to evolve and thrive.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…