The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2023
Filed:
Aug. 21, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
Hyuncheol Kim, Seoul, KR;
Yongseok Kim, Suwon-si, KR;
Satoru Yamada, Yongin-si, KR;
Sungwon Yoo, Hwaseong-si, KR;
Kyunghwan Lee, Seoul, KR;
Jaeho Hong, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A semiconductor memory device may include a first electrode and a second electrode, which are spaced apart from each other in a first direction, and a first semiconductor pattern, which is in contact with both of the first and second electrodes. The first semiconductor pattern may include first to fourth sub-semiconductor patterns, which are sequentially disposed in the first direction. The first and fourth sub-semiconductor patterns may be in contact with the first and second electrodes, respectively. The first and third sub-semiconductor patterns may be of a first conductivity type, and the second and fourth sub-semiconductor patterns may be of a second conductivity type different from the first conductivity type. Each of the first to fourth sub-semiconductor patterns may include a transition metal and a chalcogen element.