Hwaseong, South Korea

Jaeho Hong

This inventor holds 20 USPTO granted patents and 15 published patent applications, primarily in Semiconductor Devices. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2019-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jaeho Hong. Retrieved from https://idiyas.com/inventor/jaeho-hong

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 20 

% Patents Active = 100.0

Average Co-Inventor Count = 6.1

ph-index = 2

Forward Citations = 15(Granted Patents)


Location History:

  • Suwon-si, KR (2022)
  • Hwaseong-si, KR (2019 - 2024)

Company Filing History:


Years Active: 2019-2025

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Areas of Expertise:
Semiconductor Memory Device
Vertical Cell Structure
Charge Storage Pattern
Variable Resistance Memory
Memory Device Fabrication
Semiconductor Pattern
Vertical Channels
Data Structures
20 patents (USPTO):Explore Patents

Title: Jaeho Hong: A Pioneer in Semiconductor Innovations

Introduction

Jaeho Hong is a notable inventor based in Hwaseong-si, South Korea, recognized for his significant contributions to the field of semiconductor technology. With a remarkable portfolio of 19 patents, he continues to push the boundaries of innovation in memory devices.

Latest Patents

Among Jaeho Hong's most recent patents are groundbreaking advancements in semiconductor memory devices. One of his inventions outlines a semiconductor memory device incorporating a word line that extends vertically, along with a semiconductor pattern featuring a ring-shaped horizontal cross-section. This design enhances the efficacy of memory storage through a meticulously structured capacitor that includes a lower electrode layer and an upper electrode layer separated by a capacitor dielectric layer.

Another notable innovation is the vertical variable resistance memory device, which includes gate electrodes made of graphene. These electrodes are arranged in a unique configuration, allowing for improved performance and versatility. Each gate structure is complemented by insulation patterns of boron nitride (BN) and a distinct pillar structure that houses the vertical gate electrode, showcasing Jaeho's ingenuity in memory technology.

Career Highlights

Jaeho Hong's career with Samsung Electronics Co., Ltd. has been marked by a dedication to pioneering advancements in semiconductor applications. His extensive work in the research and development sector has led to several innovative patents that contribute to the realm of electronics and computing. As a leading inventor within such a prestigious company, he is at the forefront of technological evolution in the industry.

Collaborations

In his innovative journey, Jaeho Hong collaborates closely with esteemed colleagues Yongseok Kim and Hyuncheol Kim. Together, they explore complex challenges within the semiconductor field, driving advancements that set new standards for efficiency and performance.

Conclusion

Jaeho Hong stands as a prominent figure in semiconductor innovation, with a rich portfolio that demonstrates his commitment to advancing technology. His work not only contributes to the success of Samsung Electronics Co., Ltd. but also enhances the landscape of memory devices, paving the way for future inventions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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