The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2023
Filed:
Mar. 03, 2021
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Jaeho Hong, Hwaseong-si, KR;
Kyunghwan Lee, Seoul, KR;
Hyuncheol Kim, Seoul, KR;
Huijung Kim, Seongnam-si, KR;
Hyunmog Park, Seoul, KR;
Kiseok Lee, Hwaseong-si, KR;
Minhee Cho, Suwon-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); G11C 5/06 (2006.01); H01L 29/24 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1082 (2013.01); G11C 5/063 (2013.01); H01L 27/10858 (2013.01); H01L 27/10873 (2013.01); H01L 27/10885 (2013.01); H01L 27/10888 (2013.01); H01L 27/10891 (2013.01); H01L 29/24 (2013.01);
Abstract
A memory device is provided. The memory device includes: a substrate; a memory unit provided on the substrate; a channel provided on the memory unit; a word line surrounded by the channel and extending in a first horizontal direction; a gate insulating layer interposed between the channel and the word line; and a bit line contacting an upper end of the channel and extending in a second horizontal direction that crosses the first horizontal direction.