The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 30, 2024

Filed:

Oct. 18, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sungwon Yoo, Hwaseong-si, KR;

Yongseok Kim, Suwon-si, KR;

Ilgweon Kim, Hwaseong-si, KR;

Hyuncheol Kim, Seoul, KR;

Hyeoungwon Seo, Yongin-si, KR;

Kyunghwan Lee, Seoul, KR;

Jaeho Hong, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 25/065 (2023.01); H01L 21/84 (2006.01); H01L 27/13 (2006.01); H01L 25/18 (2023.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1203 (2013.01); H01L 21/84 (2013.01); H01L 25/0657 (2013.01); H01L 25/18 (2013.01); H01L 27/13 (2013.01); H01L 24/08 (2013.01); H01L 2224/08145 (2013.01);
Abstract

A semiconductor memory device is disclosed. The semiconductor memory device may include a data storage layer including data storage devices, an interconnection layer disposed on the data storage layer, and a selection element layer provided between the data storage layer and the interconnection layer. The interconnection layer may include bit lines extending in a first direction. The selection element layer may include a cell transistor connected between one of the data storage devices and one of the bit lines, and the cell transistor may include an active pattern and a word line, which crosses the active pattern and is extended in a second direction crossing the first direction.


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