IDiyas

For the Inventor, By the Inventor

Yongin-si, South Korea

Hyeoungwon Seo

USPTO Granted Patents = 12 

Average Co-Inventor Count = 3.9

ph-index = 2

Forward Citations = 10(Granted Patents)


Location History:

  • Gyeonggi-do, KR (2009)
  • Yongin, KR (2011)
  • Yongin-si, KR (2017 - 2024)

Company Filing History:

goldMedal12 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2009-2025

Loading Chart...
12 patents (USPTO):Explore Patents
1. 12213302 - Semiconductor memory device (2025-01-28),
2. 12193343 - Vertical variable resistance memory devices (2025-01-07),
3. 11943925 - Semiconductor memory device having charge storage pattern (2024-03-26),
4. 11887986 - Semiconductor memory device (2024-01-30),
5. 11887648 - Semiconductor memory devices (2024-01-30),
6. 11729974 - Semiconductor memory devices (2023-08-15),
7. 10811408 - Semiconductor device including a gate insulation pattern and a gate electrode pattern (2020-10-20),
8. 10726906 - Memory device and operation method thereof (2020-07-28),
9. 9865453 - Semiconductor devices including device isolation structures and methods of manufacturing the same (2018-01-09),
10. 9825142 - Methods of fabricating semiconductor devices (2017-11-21),
11. 8008155 - Gate electrode structure (2011-08-30),
12. 7531874 - Field effect transistors including source/drain regions extending beneath pillars (2009-05-12),

Title: Hyeoungwon Seo: A Pioneering Innovator in Semiconductor Technology

Introduction: Hyeoungwon Seo is a prominent inventor based in Yongin-si, South Korea. With a remarkable portfolio of 12 patents, Seo has made significant contributions to the field of semiconductor technology. His innovative solutions are shaping the future of memory devices, garnering attention for their complexity and functionality.

Latest Patents: Among Hyeoungwon Seo's latest patents is a groundbreaking semiconductor memory device. This device features a word line that extends vertically and a semiconductor pattern with a ring-shaped horizontal cross-section surrounding the word line. The design includes a bit line at one end and a capacitor structure at the opposite end, characterized by a lower electrode layer connected to the semiconductor pattern and an upper electrode layer surrounded by it. Another notable invention is the vertical variable resistance memory device, distinguished by gate electrodes made of graphene and a pillar structure designed to enhance memory capabilities. These inventions reflect Seo's commitment to advancing memory technology.

Career Highlights: Hyeoungwon Seo's career is marked by his association with Samsung Electronics Co., Ltd., a leader in the technology sector. His work on patenting innovative semiconductor solutions has positioned him as a key player in the industry, contributing to Samsung's reputation for cutting-edge technology.

Collaborations: Throughout his career, Hyeoungwon Seo has collaborated with talented individuals such as Ilgweon Kim and Yongseok Kim. These collaborations have fostered an environment of innovation and creativity, leading to the development of new technologies in the semiconductor industry.

Conclusion: Hyeoungwon Seo's contributions to semiconductor technology underscore his role as an influential inventor. His latest patents demonstrate a dedication to innovation that continues to impact the field. As he collaborates with other experts, his work at Samsung Electronics Co., Ltd. promises further advancements in memory device technology, highlighting the importance of inventive minds in shaping the future.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…