The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2009
Filed:
Sep. 11, 2006
Youngwoong Son, Hwasung, KR;
Jae-man Yoon, Seoul, KR;
Bong-soo Kim, Gyeonggi-do, KR;
Hyeoungwon Seo, Gyeonggi-do, KR;
Youngwoong Son, Hwasung, KR;
Jae-Man Yoon, Seoul, KR;
Bong-soo Kim, Gyeonggi-do, KR;
Hyeoungwon Seo, Gyeonggi-do, KR;
Abstract
Field effect transistors include a substrate and a pillar that extends away from the substrate. The pillar includes a base adjacent the substrate, a top remote from the substrate, and a sidewall that extends between the base and the top. An insulated gate is provided on the sidewall. A first source/drain region is provided in the substrate beneath the pillar and adjacent the insulated gate. A second source/drain region that is heavily doped compared to the first source/drain region, is provided in the substrate beneath the pillar and remote from the insulated gate. The pillar may be an I-shaped pillar that is narrower between the base and the top compared to adjacent the base and the top, such that the sidewall includes a recessed portion between the base and the top.