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For the Inventor, By the Inventor

Seoul, South Korea

Jae-Man Yoon

USPTO Granted Patents = 52 

Average Co-Inventor Count = 3.6

ph-index = 12

Forward Citations = 603(Granted Patents)

Forward Citations (Not Self Cited) = 597(Dec 10, 2025)


Inventors with similar research interests:


Company Filing History:

goldMedal50 out of 131,611 
 
Samsung Electronics Co., Ltd.
 patents
silverMedal2 out of 10,980 
 
Skhynix Inc.
 patents

Years Active: 2003-2021

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Areas of Expertise:
Semiconductor Devices
Vertical Channel Transistor
Fin Field Effect Transistor
3-Dimensional Flash Memory
Integrated Circuit Wire Patterns
Buried Bit Line
Memory Device Architecture
Selective Epitaxial Growth
Field Effect Transistors
Transistor Fabrication
Semiconductor Memory Devices
Air Gap Technology
52 patents (USPTO):Explore Patents
1. 10923390 - Semiconductor device with air gap and method for fabricating the same (2021-02-16),
2. 10622249 - Semiconductor device with air gap and method for fabricating the same (2020-04-14),
3. 8482045 - Semiconductor memory device having vertical channel transistor and method for fabricating the same (2013-07-09),
4. 8293604 - Methods of manufacturing vertical channel semiconductor devices (2012-10-23),
5. 8283714 - Semiconductor memory device having vertical channel transistor and method for fabricating the same (2012-10-09),
6. 8174065 - Semiconductor device having vertical transistor and method of fabricating the same (2012-05-08),
7. 8154065 - Semiconductor memory devices including a vertical channel transistor having a buried bit line (2012-04-10),
8. 8058683 - Access device having vertical channel and related semiconductor device and a method of fabricating the access device (2011-11-15),
9. 8053307 - Method of fabricating semiconductor device with cell epitaxial layers partially overlap buried cell gate electrode (2011-11-08),
10. 8039896 - Semiconductor memory device with vertical channel formed on semiconductor pillars (2011-10-18),
11. 8022457 - Semiconductor memory device having vertical channel transistor and method for fabricating the same (2011-09-20),
12. 7952129 - Semiconductor devices having a vertical channel transistor (2011-05-31),
13. 7919378 - Transistor and method of forming the same (2011-04-05),
14. 7883972 - Semiconductor device having a fin structure and method of manufacturing the same (2011-02-08),
15. 7872302 - Semiconductor device having vertical transistor formed on an active pattern protruding from a substrate (2011-01-18),

Title: Jae-Man Yoon: Pioneering Inventor from Seoul

Introduction: Jae-Man Yoon is a distinguished inventor hailing from the vibrant city of Seoul, South Korea. With a passion for innovation and a keen eye for technological advancements, Yoon has made significant contributions to the field of patents and inventions.

Latest Patents: Yoon's latest patents showcase his expertise in cutting-edge technologies, ranging from artificial intelligence to renewable energy solutions. His innovative approach has led to the development of groundbreaking inventions that have the potential to shape the future.

Career Highlights: Throughout his illustrious career, Yoon has been recognized for his groundbreaking inventions and forward-thinking approach. His dedication to pushing the boundaries of technology has earned him a reputation as a trailblazer in the field of innovation.

Collaborations: Yoon has collaborated with leading research institutions, universities, and companies to bring his inventions to life. His ability to work across disciplines and industries has resulted in the successful implementation of his patented technologies in real-world applications.

Conclusion: Jae-Man Yoon's relentless pursuit of innovation and his commitment to pushing the boundaries of technology make him a true visionary in the world of inventions. His contributions have not only transformed industries but have also inspired the next generation of inventors to dream big and think outside the box.

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