The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 18, 2011

Filed:

Jan. 15, 2008
Applicants:

Hui-jung Kim, Seoul, KR;

Jae-man Yoon, Seoul, KR;

Yong-chul OH, Geonggi-do, KR;

Hyun-woo Chung, Seoul, KR;

Inventors:

Hui-Jung Kim, Seoul, KR;

Jae-Man Yoon, Seoul, KR;

Yong-Chul Oh, Geonggi-do, KR;

Hyun-Woo Chung, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/335 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes a first active pattern protruding from a substrate, a second active pattern on the first active pattern, a gate electrode enclosing a sidewall of the second active pattern, a conductive layer pattern on the first active pattern, a first impurity region in the first active pattern, and a second impurity region at a surface portion of the second active pattern. The first active pattern extending along a predetermined direction may have a first region and a second region. The second active pattern may have a pillar structure and the conductive layer pattern may include a metal or a metal compound.


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