The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2012
Filed:
Jul. 19, 2010
Jae-man Yoon, Seoul, KR;
Dong-gun Park, Gyeonggi-do, KR;
Choong-ho Lee, Gyeonggi-do, KR;
Seong-goo Kim, Seoul, KR;
Won-sok Lee, Gyeonggi-do, KR;
Seung-bae Park, Gyeonggi-do, KR;
Jae-man Yoon, Seoul, KR;
Dong-gun Park, Gyeonggi-do, KR;
Choong-Ho Lee, Gyeonggi-do, KR;
Seong-Goo Kim, Seoul, KR;
Won-sok Lee, Gyeonggi-do, KR;
Seung-bae Park, Gyeonggi-do, KR;
Abstract
Vertical channel semiconductor devices include a semiconductor substrate with a pillar having an upper surface. An insulated gate electrode is around a periphery of the pillar. The insulated gate electrode has an upper surface at a vertical level lower than the upper surface of the pillar to vertically space apart the insulated gate electrode from the upper surface of the pillar. A first source/drain region is in the substrate adjacent the pillar. A second source/drain region is disposed in an upper region of the pillar including the upper surface of the pillar. A contact pad contacts the entire upper surface of the pillar to electrically connect to the second source/drain region.