The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2020

Filed:

Jun. 05, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventor:

Hyeoungwon Seo, Yongin-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/40 (2006.01); G11C 11/408 (2006.01); G11C 11/4074 (2006.01); G11C 5/14 (2006.01); G11C 11/4076 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4085 (2013.01); G11C 5/145 (2013.01); G11C 11/4074 (2013.01); G11C 11/4076 (2013.01);
Abstract

An operation method of a memory device includes sequentially receiving an active command and a precharge command from an external device, during a first time interval, applying a first activation voltage to a selected wordline in response to the active command, applying a second activation voltage to the selected wordline after the first time interval elapses from a first time point when the first active command is received, and applying a first deactivation voltage to the selected wordline in response to the precharge command. The second activation voltage is lower than the first activation voltage and is higher than the first deactivation voltage.


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