The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2020
Filed:
Apr. 13, 2018
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Hyeoungwon Seo, Yongin-si, KR;
Wonsok Lee, Suwon-si, KR;
Min Hee Cho, Suwon-si, KR;
Hyun-Sook Byun, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Abstract
A semiconductor device includes a substrate including an active region defined by a device isolation layer. A word line structure is in a trench formed in an upper portion of the substrate. The word line structure includes a gate insulation pattern covering an inner surface of the trench. A gate electrode pattern is on the gate insulation pattern. A first work function pattern is between the gate insulation pattern and the gate electrode pattern. A second work function pattern is on the first work function pattern and extends along a side surface of the gate electrode pattern. The first work function pattern has a top surface at a level below that of a bottom surface of the gate electrode pattern. The first work function pattern has a work function greater than that of the second work function pattern.