The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2023

Filed:

Feb. 23, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Kyunghwan Lee, Seoul, KR;

Yongseok Kim, Suwon-si, KR;

Hyuncheol Kim, Seoul, KR;

Hyeoungwon Seo, Yongin-si, KR;

Sungwon Yoo, Hwaseong-si, KR;

Jaeho Hong, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); G11C 7/18 (2006.01); G11C 8/14 (2006.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/10 (2023.01); H10B 43/35 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); G11C 7/18 (2013.01); G11C 8/14 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/10 (2023.02); H10B 43/35 (2023.02);
Abstract

A semiconductor memory device includes a word line extending in a vertical direction on a substrate, a channel layer surrounding the word line to configure a cell transistor and having a horizontal ring shape with a predetermined horizontal width, a bit line disposed at one end of the channel layer in a first horizontal direction and extending in a second horizontal direction perpendicular to the first horizontal direction, and a cell capacitor disposed at other end of the channel layer in the first horizontal direction, the cell capacitor including an upper electrode layer extending in the vertical direction, a lower electrode layer surrounding the upper electrode layer, and a capacitor dielectric layer disposed between the upper electrode layer and the lower electrode layer.


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