The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 06, 2023

Filed:

Apr. 08, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Kyunghwan Lee, Seoul, KR;

Yongseok Kim, Suwon-si, KR;

Hyuncheol Kim, Seoul, KR;

Sungwon Yoo, Hwaseong-si, KR;

Jaeho Hong, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 29/10 (2006.01); H01L 29/786 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1033 (2013.01); H01L 29/0615 (2013.01); H01L 29/7869 (2013.01); H01L 29/78642 (2013.01);
Abstract

A semiconductor device includes a gate electrode on a substrate, a channel surrounding sidewalls of the gate electrode on the substrate, and source/drain electrodes on the substrate at opposite sides of the gate electrode in a first direction parallel to an upper surface of the substrate. A thickness of the channel from the gate electrode to the source/drain electrodes in a horizontal direction parallel to the upper surface of the substrate is not constant but varies in a vertical direction perpendicular to the upper surface of the substrate.


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