Semiconductor devices and methods of manufacturing the same

Abstract

A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a substrate; an isolation layer in a first trench, defining an active region of the substrate; a gate structure in a second trench intersecting the active region; and first and second impurity regions spaced apart from each other by the gate structure. The gate structure includes a gate dielectric layer in the second trench; a first metal layer on the gate dielectric layer; and a gate capping layer on the first metal layer. The gate dielectric layer includes Dand NDin an interface region, adjacent the first metal layer, and D is deuterium, N is nitrogen, and Dis positively-charged deuterium.